Calculating the Energy Band Structure Using Sampling and Green's Function Techniques
نویسندگان
چکیده
ABSTRACT − In this paper, a new method based on Green's function theory and Fourier transform analysis has been proposed for calculating band structure with high accuracy and low processing time. This method utilizes sampling of potential energy in some points of crystal's unit cell with Dirac delta functions, then through lattice Fourier transform gives us a simple and applicable formula for most of nanostructures. Sampling of potential in a crystal lattice of any kind contains accurate approximation of actual potential energy of atoms in the crystal. The step forward regarding the method concentrated on two novel ideas: Firstly, the potential was sampled and approximated by delta functions spread over the unit cell. Secondly, the principal equation of lattice is translated into reciprocal lattice and resulted in a huge reduction of calculations. By this method, it is possible to extract the band structure of any one-, twoor three-dimensional crystalline structure.
منابع مشابه
ترابرد در دیودهای تونلزنی تشدیدی نقطه کوانتومی در رژیم غیربرهمکنشی
In this paper, we used green's function approach in microscopic theory to investigate a resonant tunneling diode (RTD). We introduced the detailed Hamiltonian for each part of the photovoltaic p-i-n system, then by calculating the green's function components in tight-binding approximation, we calculate local density of states and current-voltage characteristic of the p-i-n structure. Our result...
متن کاملElectronic transport through dsDNA based junction: a Fibonacci model
A numerical study is presented to investigate the electronic transport properties through a synthetic DNA molecule based on a quasiperiodic arrangement of its constituent nucleotides. Using a generalized Green's function technique, the electronic conduction through the poly(GACT)-poly(CTGA) DNA molecule in a metal/DNA/metal model structure has been studied. Making use of a renormalization schem...
متن کاملBand bending engineering in p-i-n gate all around Carbon nanotube field effect transistors by multi-segment gate
The p-i-n carbon nanotube (CNT) devices suffer from low ON/OFF current ratio and small saturation current. In this paper by band bending engineering, we improved the device performance of p-i-n CNT field effect transistors (CNTFET). A triple gate all around structure is proposed to manage the carrier transport along the channel. We called this structure multi-segment gate (MSG) CNTFET. Band to ...
متن کاملBerry curvature and energy bands of graphene
In this paper energy bands and Berry curvature of graphene was studied. Desired Hamiltonian regarding the next-nearest neighbors obtained by tight binding model. By using the second quantization approach, the transformation matrix is calculated and the Hamiltonian of system is diagonalized. With this Hamiltonian, the band structure and wave function can be calculated. By using calculated wave f...
متن کاملBerry curvature and energy bands of graphene
In this paper energy bands and Berry curvature of graphene was studied. Desired Hamiltonian regarding the next-nearest neighbors obtained by tight binding model. By using the second quantization approach, the transformation matrix is calculated and the Hamiltonian of system is diagonalized. With this Hamiltonian, the band structure and wave function can be calculated. By using calculated wave f...
متن کاملذخیره در منابع من
با ذخیره ی این منبع در منابع من، دسترسی به آن را برای استفاده های بعدی آسان تر کنید
عنوان ژورنال:
دوره شماره
صفحات -
تاریخ انتشار 2007